Identification of the carbon antisite-vacancy pair in 4H-SiC.
نویسندگان
چکیده
The metastability of vacancies was theoretically predicted for several compound semiconductors alongside their transformation into the antisite-vacancy pair counterpart; however, no experiment to date has unambiguously confirmed the existence of antisite-vacancy pairs. Using electron paramagnetic resonance and first principles calculations we identify the S15 center as the carbon antisite-vacancy pair in the negative charge state (C(Si)V-(C)) in 4H-SiC. We suggest that this defect is a strong carrier-compensating center in n-type or high-purity semi-insulating SiC.
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ورودعنوان ژورنال:
- Physical review letters
دوره 96 14 شماره
صفحات -
تاریخ انتشار 2006